USD 13.13USD 19.89

Original TO-263 RJP30H2A RJP63K2 TO-3P FGA25N120 Field Effect IGBT Transistor Fets High Powerful 25A 1200V Integrated Circuit

5/10PCS TO-263 RJP30H2A RJP63K2 TO-3P FGA25N120 Field Effect IGBT Transistor Fets High Powerful 25A 1200V Integrated Circuits BJT

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Product Type: IGBT FET, IGBT High Power Transistor

Brand: Chanzon

Package Case: TO-263/TO-3P

TO-263 IGBT FET:10PCS*RJP30H2A10PCS*RJP63K2

TO-3P IGBT High Power Transistor:5PCS*FGA25N120

Condition : New

is_customized : Yes

Dissipation Power : TO263 New Common Mount Triode Tube Triacs Silicon Transistors

Origin : Mainland China

Model Number : RJP30H2 TO 263 TO 3P TO3P 35A 360V Bipolar Junction Power SMD Triode

Operating Temperature : DIY Insulated Gate Audion Replacements Parts Electronics Components

Brand Name : CHANZON

Application : Standard

Supply Voltage : Standard

Type : Voltage Regulator

Package : DIP